Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi_4−x/3Ti_4−xV_xO₁₅ (SBTV−x) were synthesized. The vanadium doping content, x, rangs from 0.00 to 0.06. The crystal structure of SrBi₄Ti₄O₁₅ is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2P_r). The 2P_r of STBV−0.03 reaches a very large value, which is over 50 μC/cm² and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi₄Ti₄O₁₅. V-doping can improve the electric properties of SrBi₄Ti₄O₁₅ without sacrificing its thermal stableness.