The growth and optical properties of ZnO nanowires at the junctions of nanowalls

Highly pure ZnO nanowires at the junctions of nanowalls have been successfully prepared via a simple vapor phase route at relative low temperature in the absence of catalyst. SEM, TEM, Raman scattering and PL were employed to characterize as-grown samples. The nanowires have average diameter of 10 nm with 001] growth direction. Raman scattering shifted from higher frequency to lower frequency and the enhancement of PL intensity of the green emission to the UV may be attributed to smaller nanowires and thinner nanowalls. This nanostructure may have important applications in batteries, light-emitting and energy conversion devices and other fields demanding high surface area materials.