Crystallization of amorphous Co2MnSi thin film |
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Authors: | Suk J Kim |
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Institution: | Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea |
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Abstract: | Amorphous Co2MnSi thin film was deposited using radio-frequency sputtering. The amorphous film crystallized into a single-phased L21 structure at 500 °C, which was highly disordered. The structure was meta-stable as the crystallized film decomposed upon further heating. Increasing the annealing temperature to 600 °C precipitated fcc Co together with Co2MnSi. Magnetic measurements showed that the as-deposited amorphous film was paramagnetic, exhibiting a spin glass state below 44 K. The phase transition at 500 °C produced a ferromagnetic Co2MnSi thin film whose saturation magnetic moment was considerably lower than reported values due to the disordered structure of the crystallized film. |
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Keywords: | 75 50Kj 75 60Nt |
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