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Photoluminescence from amorphous silica nanowires synthesized using TiN/Ni/SiO2/Si and TiN/Ni/Si substrates
Authors:Ki-Hong Lee  Charles Lofton  Won-Seon Seo  Myung-Hyun Lee
Affiliation:a Department of Materials Science and Engineering, University of Florida, 255 Rhines Hall, Gainesville, FL 32611, USA
b Advanced Materials Analysis and Evaluation Center, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, South Korea
Abstract:Photoluminescence characteristics of amorphous silica nanowires (a-SiONWs) grown on TiN/Ni/Si and TiN/Ni/SiO2 substrates have been studied. A-SiONWs grown on TiN/Ni/Si substrates show a Si-rich composition compared to those grown from TiN/Ni/SiO2/Si. The emission characteristics of the nanowires were found to depend on the type of substrate. By annealing the a-SiONWs grown on TiN/Ni/Si in air, emission bands shift from blue to green bands. It is likely that silicon to oxygen ratio is an important factor in deciding the types of defects and emission bands of amorphous silica nanowires.
Keywords:81.07.&minus  b
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