Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates |
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Authors: | Li Yang Xing Zhang Ru Huang Guoyan Zhang Xia An |
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Institution: | Institute of Micro-Electronics, Peking University, Beijing 100871, China |
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Abstract: | Single crystalline GaN nanoribbons were synthesized through nitriding Ga2O3 thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively. |
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Keywords: | 81 05Ea |
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