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Low-temperature transport properties of individual SnO2 nanowires |
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| Authors: | Yong-Jun Ma Feng Zhou Ze Zhang |
| Institution: | a Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China b Key Laboratory of Extreme Conditions Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China c Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022,China |
| Abstract: | Stannic oxide (SnO2) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T−1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears. |
| Keywords: | 73 63 &minus b 81 07 &minus b 72 20 &minus i |
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