Electrical properties of highly (111)-oriented lead zirconate thin films |
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Authors: | Xin-Gui Tang Jie Wang Xiao-Xing Wang Helen Lai-Wah Chan |
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Affiliation: | Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China |
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Abstract: | Antiferroelectric PbZrO3 thin films were grown on Pt/Ti/SiO2/Si substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO3/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (Pr) and coercive electric field (Ec) values of 8.97 μC/cm2 and 162 kV/cm, respectively. The leakage current density of the highly (111)-oriented PbZrO3 film was less than 1.0×10−7 A/cm2 over electric field ranges from 0 to 105 kV/cm. The conduction current depended on the voltage polarity. The PbZrO3/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour of Pt/PbZrO3/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, the currents have contributions of both dielectric relaxation current and leakage current. |
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Keywords: | 77.80.&minus s 51.50.+v 68.37.&minus d |
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