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Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures |
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| Authors: | TW Kim DC Choo YR Jang MH Jung Jae-Hoon Lee |
| Institution: | a Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea b Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, South Korea c Material Science Team, Korea Basic Science Institute, Daejeon 305-333, South Korea d Department of Physics, Chungbuk National University, Cheung Ju 361-763, South Korea e Department of Electric and Electronic Engineering, Kyungpook National University, Taegu 702-701, South Korea |
| Abstract: | The Shubnikov-de Haas (S-dH) results at 1.5 K for AlxGa1−xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional electron gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in AlxGa1−xAs/AlN/GaN heterostructures. |
| Keywords: | 68 55 Bd 73 20 DX and 73 25 &minus t |
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