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Al掺杂的尖晶石型LiMn2O4的结构和电子性质
引用本文:高潭华,刘慧英,张鹏,吴顺情,杨勇,朱梓忠.Al掺杂的尖晶石型LiMn2O4的结构和电子性质[J].物理学报,2012,61(18):187306-187306.
作者姓名:高潭华  刘慧英  张鹏  吴顺情  杨勇  朱梓忠
作者单位:1. 武夷学院电子工程系,武夷山,354300
2. 集美大学理学院,厦门,361021
3. 厦门大学物理系,厦门,361005
4. 厦门大学固体表面物理化学国家重点实验室,厦门,361005
5. 厦门大学物理系,厦门361005 福建省理论与计算化学重点实验室,厦门大学,厦门361005
基金项目:国家重点基础研究发展计划(批准号: 2011CB935903)和福建省自然科学基金(批准号: 2008J04018)资助的课题.
摘    要:采用基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)和GGA+U方法下对尖晶石型LiMn2O4及其Al掺杂 的尖晶石型LiAl0.125Mn1.875O4晶体的结构和电子性质进行了计算. 结果表明: 采用GGA方法得到尖晶石型LiMn2O4是立方晶系结构, 其中的Mn离子为+3.5价, 无法解释它的Jahn-Teller 畸变. 给出的LiMn2O4能带结构特征也与实验结果不符. 而采用GGA+U方法得到在低温下的LiMn2O4和其掺杂 体系LiAl0.125Mn1.875O4的晶体都是正交结构, 与实验一致. 也能明确地确定Mn的两种价态Mn3+/Mn4+的分布并且能够说明Mn3+O6z方向有明显的Jahn-Teller 畸变, 而Mn4+O6则没有畸变. LiMn2O4的能带结构与实验比较也能够符合. 采用GGA+U方法对Al掺杂体系的LiAl0.125Mn1.875O4的研究表明, 用Al替换一个Mn不会明显地改变晶体的电子性质, 但可以有效地消除Al3+O6 八面体的Jahn-Teller畸变, 从而改善正极材料LiMn2O4的性能, 这与电化学实验的观察结果相一致.

关 键 词:LiMn2O4  Al掺杂  电子结构  第一原理计算
收稿时间:2011-11-25

Structural and electronic properties of Al-doped spinel LiMn2O4
Gao Tan-Hua,Liu Hui-Ying,Zhang Peng,Wu Shun-Qing,Yang Yong,Zhu Zi-Zhong.Structural and electronic properties of Al-doped spinel LiMn2O4[J].Acta Physica Sinica,2012,61(18):187306-187306.
Authors:Gao Tan-Hua  Liu Hui-Ying  Zhang Peng  Wu Shun-Qing  Yang Yong  Zhu Zi-Zhong
Institution:1. Department of Electronic Engineering, Wuyi University, Wuyishan 354300, China;2. School of Science, Jimei University, Xiamen 361021, China;3. Department of Physics, Xiamen University, Xiamen 361005, China;4. State Key Laboratory for Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, China;5. Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, China
Abstract:The structural and electronic properties of spinel LiMn2O4 and its Al doping system LiAl0.125Mn1.875O4 are investigated within the density functional theory in both the generalized gradient approximation (GGA) and the GGA with Hubbard U correction (GGA+U). The results from the GGA method suggest that LiMn2O4 has a cubic structure and the valences of Mn ions are all +3.5, which is unable to explain the Jahn-Teller distortions in the material. The band structure of LiMn2O4 predicted by the GGA method is also inconsistent with experimental result. With the GGA+U method, the low temperature structures of LiMn2O4 and its Al doping system LiAl0.125 Mn1.875O4 are shown to be orthogonal, the two different valence states of Mn, i.e., Mn3+/Mn4+ ions, are then determined, which is then able to explain the Jahn-Teller distortion in octahedron Mn3+O6 and the non-existence of distortion in octahedron Mn4+O6. These results are in good accordance with experimental data. Their band structures by GGA+U calculations are also consistent with experimental results. The GGA+U calculations on the LiAl0.125Mn1.875O4 indicate that with the replacement of an Mn by Al, the crystal structure and electronic properties are not significantly changed, but the Jahn-Teller distortion in octahedron Al3+O6 can be effectively eliminated, which could improve the performance of the anode materials based on LiMn2O4. The phenomenon is in consistent with the electrochemical experiments.
Keywords:LiMn2O4  Al doping  electronic structures  first-principles calculations
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