| 非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型 |
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| 引用本文： | 李聪,庄奕琪,韩茹,张丽,包军林.非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型[J].物理学报,2012,61(7):78504-078504. |
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| 作者姓名： | 李聪 庄奕琪 韩茹 张丽 包军林 |
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| 作者单位： | 1. 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071;2. 西北工业大学航空微电子中心, 西安 710072 |
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| 基金项目： | 中央高校基本科研业务费专项资金(批准号: K50511250001)和国家自然科学基金(批准号: 61076101)资助的课题. |
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| 摘 要： | 为抑制短沟道效应和热载流子效应, 提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构. 通过在圆柱坐标系中精确求解三段连续的泊松方程, 推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型. 结果表明, 新结构可有效抑制短沟道效应和热载流子效应, 并具有较小的关态电流. 此外, 分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响, 而栅电极功函数对亚阈值电流的影响较大. 解析模型结果和三维数值仿真工具ISE所得结果高度符合.
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| 关 键 词： | 非对称HALO掺杂 栅交叠轻掺杂漏 围栅MOSFET 解析模型 |
| 收稿时间： | 2011-09-14 |
Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain |
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| Li Cong,Zhuang Yi-Qi,Han Ru,Zhang Li,Bao Jun-Lin.Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain[J].Acta Physica Sinica,2012,61(7):78504-078504. |
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| Authors: | Li Cong Zhuang Yi-Qi Han Ru Zhang Li Bao Jun-Lin |
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| Institution: | 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;2. Aviation Microelectronics Center, Northwestern Polytechnic University., Xi'an 710072, China |
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| Abstract: | A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, threshold voltage, and subthreshold current. It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects, and simultaneously reduce the off-state current. It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region, while work-function of gate electrode has a strong influence on subthreshold current. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE. |
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| Keywords: | asymmetric HALO-doping gate overlapped lightly-doped drain surrounding-gate MOSFET analytical model |
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