| 基于1/f噪声变化的pn结二极管辐射效应退化机理研究 |
| |
| 引用本文： | 孙鹏,杜磊,何亮,陈文豪,刘玉栋,赵瑛.基于1/f噪声变化的pn结二极管辐射效应退化机理研究[J].物理学报,2012,61(12):127808-127808. |
| |
| 作者姓名： | 孙鹏 杜磊 何亮 陈文豪 刘玉栋 赵瑛 |
| |
| 作者单位： | 西安电子科技大学技术物理学院,西安,710071 |
| |
| 基金项目： | 国家自然科学基金(批准号: 60276028)资助的课题. |
| |
| 摘 要： | 基于pn结二极管辐射效应退化机理中位移效应和电离效应之间的关系, 并结合pn结二极管辐射退化的噪声机理, 得到了pn结二极管辐射诱导低频噪声的变化规律, 发现两种效应引起的二极管噪声变化规律之间的不一致性. 根据实验得到的噪声变化规律, 判断出了辐射应力条件下两种效应之间的关系, 很好地解释了实验中出现的不符合原有理论解释的现象, 对器件加固的研究有着重要意义.
|
| 关 键 词： | pn结 辐照损伤 1/f 噪声 损伤 |
| 收稿时间： | 2011-09-27 |
Radiation degradation mechanism of pn-junction diode based on 1/f noise variation |
| |
| Sun Peng,Du Lei,He Liang,Chen Wen-Hao,Liu Yu-Dong,Zhao Ying.Radiation degradation mechanism of pn-junction diode based on 1/f noise variation[J].Acta Physica Sinica,2012,61(12):127808-127808. |
| |
| Authors: | Sun Peng Du Lei He Liang Chen Wen-Hao Liu Yu-Dong Zhao Ying |
| |
| Institution: | School of Technical Physics, Xidian University, Xi’an 710071, China |
| |
| Abstract: | Based on the relationship between ionizing damage effect and displacement damage effect under radiation degradation mechanism of pn-junction diode, and combined with the noise theory of radiation degradation of pn-junction diode, a change law of low frequency noise of pn-junction diode under radiation found. The inconsistency between the change laws of of two kinds of effects is found. Based on the experimental result, the relationship between two kinds of effects is judged. This relationship can explain the experimental result. This is very important for the device hardening research. |
| |
| Keywords: | pn junction radiation damage 1/f noise damage |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
