带有n+深阱的三阱CMOS工艺中寄生NPN双极效应及其对电荷共享的影响

基于三维TCAD器件模拟, 研究了带有 n⁺深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应. 研究结果表明在重离子辐照时, n⁺深阱会导致寄生的NPN双极型晶体管触发, 显著增强NMOS间的电荷共享, 其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2---4倍. 进而分别研究了n阱接触和p 阱接触对寄生NPN双极放大的影响, 结果表明增大p阱接触的面积和减小 n 阱接触的距离将抑制NPN晶体管的放大作用, 而增大n 阱接触的面积将增强NPN的放大作用.

NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well

In this paper, we investigate the charge sharing collection induced by heavy ion radiation in a tripe well CMOS technology with n⁺ deep well though 3-D TCAD device simulation. Result shows that n⁺ deep well will induce the parasitical NPN bipolar transistor, and therefore enhance the charge sharing between NMOS remarkably. The enhancement factor is 2---4 times that in PNP bipolar in dual well technology. Furthermore, the effects of n-well contact and p-well contact on NPN bipolar are studied. The result shows that the NPN bipolar enhancement factor will decrease with the increase of p-well contact area and with the decreasing of its distance to device, while the NPN bipolar enhancement factor will increase with the increase of n-well contact area.