Characteristics of pentacene organic thin film transistor with top gate and bottom contact |
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| Authors: | Yuan Guang-Cai Xu Zheng Zhao Su-Ling Zhang Fu-Jun Jiang Wei-Wei Song Dan-Dan Zhu Hai-N Li Shao-Yan Huang Jin-Ying Huang Hao Xu Xu-Rong |
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| Affiliation: | Institute of Optoelectronic Technology, Beijing JiaotongUniversity,Beijing 100044, China;Key Laboratory of Luminescence and Optical Information (BeijingJiaotong University), Ministry ofEducation, Beijing 100044, China |
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| Abstract: | High performance pentacene organic thin film transistors (OTFT) weredesigned and fabricated using SiO2 deposited by electron beamevaporation as gate dielectric material. Pentacene thin films wereprepared on glass substrate with S--D electrode pattern made from ITOby means of thermal evaporation through self-organized process. Thethreshold voltage VTH was --2.75± 0.1V in 0---50Vrange, and that subthreshold slopes were 0.42± 0.05V/dec. Thefield-effect mobility (μEF) of OTFT device increased withthe increase of VDS, but the μEF of OTFT deviceincreased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off currentratio was 0.48× 105 and subthreshold slope was 0.44V/dec.The μEF was 1.10cm2/(V.s), threshold voltagewas --2.71V for the OTFT device. |
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| Keywords: | thin-film transistor pentacene threshold voltage subthreshold slope |
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