| 极低温微波半导体开关探索研究 |
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| 引用本文： | 陈荣飞.极低温微波半导体开关探索研究[J].低温与超导,2011,39(1):71-75. |
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| 作者姓名： | 陈荣飞 |
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| 作者单位： | 中国电子科技集团公司第十六研究所;中国电子科技集团公司低温电子技术研发中心; |
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| 摘 要： | 针对开关滤波器组中超导滤波器的应用,文中探讨了极低温微波半导体开关的研制,制作了一种微波PIN管SPDT开关.开关在20K温度下的插损≤1.1dB,隔离度≥56dB,开关速度14ns.对低温对开关性能的影响进行了分析,为极低温微波开关的设计提供了依据.
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| 关 键 词： | 极低温 单刀双掷开关 插损 隔离度 |
Design of microwave band semiconductor switch at low temperature |
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| Chen Rongfei.Design of microwave band semiconductor switch at low temperature[J].Cryogenics and Superconductivity,2011,39(1):71-75. |
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| Authors: | Chen Rongfei |
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| Institution: | Chen Rongfei1,2(1.No.16th Research Institute of China Electronics Technology Group Corporation,Hefei 230043,China,2.R & D Centre of Cryoelectronics,China Electronics Technology Group Corporation,China) |
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| Abstract: | Based on superconducting filter application in switch filter subassembly,a kind of microwave band semiconductor switch,e.g.PIN diode SPDT,was designed working at low temperature.Its insertion loss was less than 1.1dB,isolation value was more than 56dB,and speed was 14ns,at 20K.The affect of low temperature on the switch performances was analysed. |
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| Keywords: | Ultra-low temperature SPDT Insertion Loss Isolation |
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