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Near EF electronic structure of heavily boron-doped superconducting diamond |
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| Authors: | H Okazaki T Yokoya J Nakamura T Nakamura Y Tamenori Y Takata S Shin M Nagao H Kawarada |
| Institution: | a The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan b Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, Tokyo 113-8656, Japan c Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Cyofugaoka, Cyofu, Tokyo 182-8585, Japan d Japan Synchrotron Radiation Research Institute (JASRI)/Spring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan e RIKEN/Spring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan f National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan g School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan h Department of Quantum Matter, Graduate School of Advanced Sciences of Matter (ADSM), 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan |
| Abstract: | We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. |
| Keywords: | C Photoelectron spectroscopy D Electronic structure D Fermi surface D Superconductivity |
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