Quantitative analysis of blistering upon annealing of hydrogen-ion-implanted diamond single crystals |
| |
Authors: | G. F. Kuznetsov |
| |
Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Fryazino Branch), pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia |
| |
Abstract: | Local blistering observed upon high-temperature annealing of natural diamond single crystals implanted by 350-keV hydrogen ions with a dose of 12 × 1016 cm?2 is studied. Based on room-temperature measurements, Griffith cracking criterion, and gas law, model quantitative calculations of blister size (R j = (0.361?5.568) × 10?3 m, V j = (307?9695) × 10?18 m3) and the amount of molecules in a blister (n j = (0.448?10.95) × 1013) are carried out for the first time. At room temperature, T 1 = 293 K, the amount of local elastic stresses σij in the upper layer of the diamond is counterbalanced by (inner) hydrogen pressure P ij of the (σ j1 = P j1 = (2.968?6.439) × 107 Pa). At annealing temperature T 2 = 1693 K, the hydrogen pressure rises to P j2 = (0.1717?0.8750) GPa. Under subsequent annealing at a still higher temperature, T 3 = 1743 K, the pressure in the blisters might be expected to grow to P j3 = (0.1747?0.9010) GPa; however, some of blisters collapse and thin diamond slices flake away. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|