a Physics Department, Trinity College, Dublin 2, Ireland
b INFM and Dipt. di Fisica, Universita di Catania, Italy
c CNR-IMETEM, Stradale Primsolo 50, I-95121 Catania, Italy
Abstract:
Electron paramagnetic resonance (EPR) measurements have been used to characterise Er complexes formed in FZ silicon by the implantation of erbium together with either oxygen or fluorine. The samples have a 2 μm thick layer containing 1019 Er/cm3 alone or in addition 3×1019 O/cm3, 1020 O/cm3 or 1020 F/cm3. Various post-implantation anneals were carried out. Several different erbium centres, which have either C1h monoclinic or trigonal symmetry, are observed and the way in which the type of centre depends on the implantation and annealing conditions is reported.