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光探测器TO封装的高频分析与改进
引用本文:张尚剑,刘戬,温继敏,祝宁华.光探测器TO封装的高频分析与改进[J].半导体学报,2005,26(11):2254-2258.
作者姓名:张尚剑  刘戬  温继敏  祝宁华
作者单位:中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100084;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100085;中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100086
基金项目:国家科技攻关项目 , 科技部科研项目 , 国家重点基础研究发展计划(973计划)
摘    要:推导了封装前后探测器的散射参数的关系,提出了探测器封装网络高频影响的两种分析方法.一种方法是直接比较封装前后探测器的频响,另一种则是从待封装探测器的反射系数和封装网络散射参数计算获得.以TO封装探测器为例,对两种方法的有效性进行了验证.分析结果表明,封装网络中电容和电感的谐振效应具有补偿作用,通过改变封装中的这些参数,改进了TO封装探测器的频响.

关 键 词:光通信技术  探测器  TO封装  散射参数  寄生效应  光探测器  封装  高频分析  改进  Packaging  Frequency  Effect  High  Improvement  参数计算  补偿作用  谐振效应  电感  电容  结果  验证  有效性  散射参数  反射系数  频响  直接比较
文章编号:0253-4177(2005)11-2254-05
收稿时间:2005-03-01
修稿时间:2005-06-13

Analysis and Improvement on the High Frequency Effect of TO Packaging for Photodiodes
Zhang Shangjian,Liu Jian,Wen Jimin and Zhu Ninghua.Analysis and Improvement on the High Frequency Effect of TO Packaging for Photodiodes[J].Chinese Journal of Semiconductors,2005,26(11):2254-2258.
Authors:Zhang Shangjian  Liu Jian  Wen Jimin and Zhu Ninghua
Institution:State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China
Abstract:Two methods for analyzing the high frequency effect of the packaging techniques for photodiodes are presented.The first method compares the frequency responses of the photodiode before and after packaging,and the second one is based on the relations between the scattering parameters of the packaging network,photodiode chip,and module.In the experiment of the TO photodiode module,results from the two methods show coherence,which indicates that the methods established are effective for practical applications.Analysis results also denote that there is a resonance between the inductance in the bonding wire and the parasitic capacitance in both the feedthru of the TO header and the photodiode chip.This resonance can be used to compensate for the overall frequency response of the device.By adjusting the values of the inductance and capacitance,an optimized frequency response of the TO photodiode module is achieved.
Keywords:optical communication  photodiode  TO packaging  scattering parameters  parasitics
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