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Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine |
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| Authors: | Gangyi Chen Dick Cheng Robert F. Hicks Atif M. Noori Sumiko L. Hayashi Mark S. Goorsky Ravi Kanjolia Raj Odedra |
| Affiliation: | aChemical Engineering Department, University of California (UCLA), 405 Hilgard Avenue, Los Angeles, CA 90095-1592, USA bDepartment of Material Science and Engineering, University of California, Los Angeles, CA 90095, USA cEpichem Inc. 1429 Hilldale Avenue, Haverhill, MA 01832, USA dEpichem Ltd., Power Road, Bromborough, Wirral, Merseyside CH62 3QF, UK |
| Abstract: | Indium phosphide, gallium arsenide phosphide, and aluminum indium phosphide have been deposited by metalorganic vapor-phase epitaxy using tertiarybutylphosphine and tertiarybutylarsine. The effects of growth temperature and V/III ratio on the amount of silicon, sulfur, carbon, and oxygen in InP have been determined. Minimum incorporation was observed at 565 °C and a V/III ratio of 32. In this case, the material contained a background carrier concentration of 2.7×1014 cm−3, and the Hall mobilities were 4970 and 135,000 cm2/V s at 300 and 77 K. The oxygen contamination in AlInP was found to be only 9.0×1015 cm−3 for deposition at 650 °C and a V/III ratio of 35. The relative distribution of arsenic to phosphorus in GaAsyP1−y was determined at temperatures between 525 and 575 °C. The distribution coefficient [(NAs/NP)film/(PTBAs/PTBP)gas] ranged from 25.4 to 8.4, and exhibited an Arrhenius relationship with an apparent activation energy of 1.2 eV. |
| Keywords: | A1. Impurities A3. Metalorganic vapor phase epitaxy B1. Phosphides B2. Semiconducting III–V materials |
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