碳化硅器件挑战现有封装技术

碳化硅(SiC)器件的新特性和移动应用的功率密度要求给功率器件的封装技术提出了新的挑战。现有功率器件的封装技术主要是在硅基的绝缘栅双极晶体管(Insulated Gate Bipolar Transistor,IGBT)和金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)等基础上发展起来的,并一直都在演进,但这些渐进改良尚不足以充分发挥SiC器件的性能,因而封装技术需要革命性的进步。在简述现有封装技术及其演进的基础上,主要从功率模块的角度讨论了封装技术的发展方向。同时讨论了功率模块的新型叠层结构以及封装技术的离散化、高温化趋势,并对SiC器件封装技术的发展方向做出了综合评估。

SiC Device to Challenge Existed Packaging Technologies

The new characteristics of SiC devices and the higher power density demanding of mobile applications have put forward new challenges for the packaging technology of power devices.The packaging technology of existing power devices is mainly developed on the basis of Si based insulated gate bipolar transistor(IGBT)and metal oxide semiconductor field effect transistor(MOSFET)and has been continuously evolving,but these improvements are not enough to bring out the advanced performance of SiC devices.Therefore,packaging technology requires revolutionary progress.Based on the existing packaging technologies and related evolution,the development directions of the packaging technology,especially for the power modules are mainly discussed.In addition,the new laminated structures,the discretization of packaging technologies,and the trend of high temperature requirement are discussed.And comprehensive comment of the overall development directions of SiC device packaging technology is proposed.