| 退火温度对溶胶-凝胶法制备锌锡氧化物薄膜晶体管的影响 |
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| 引用本文： | 罗文彬,陈文彬.退火温度对溶胶-凝胶法制备锌锡氧化物薄膜晶体管的影响[J].发光学报,2013,34(11):1550-1554. |
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| 作者姓名： | 罗文彬 陈文彬 |
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| 作者单位： | 电子科技大学光电信息学院 四川省显示科学与技术重点实验室, 四川 成都 610054 |
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| 基金项目： | 四川省应用基础研究项目(2010JY003)资助 |
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| 摘 要： | 采用溶胶-凝胶法制备了非晶锌锡氧化物(ZTO)薄膜晶体管(TFT),通过热重-差热分析(TG-DTA)对ZTO胶体中的化学反应进行了分析,研究了不同退火温度对ZTO TFTs性能的影响。结果表明:当退火温度在300~500℃范围内时,薄膜为非晶态结构,薄膜表面致密、平整。当退火温度达到400℃时,薄膜在可见光范围内具有高透过率(>85%)。随着退火温度的升高,器件阈值电压明显降低,由15.85 V降至3.76 V,载流子迁移率由0.004 cm2·V-1·s-1提高到5.16 cm2·V-1·s-1,开关电流比达到105。退火温度的升高明显改善了ZTO TFT的电学性能。
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| 关 键 词： | 溶胶-凝胶法 退火温度 薄膜晶体管 电学性能 |
| 收稿时间： | 2013-07-01 |
Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method |
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| LUO Wen-bin,CHEN Wen-bin.Influence of Annealing Temperature on Zinc-Tin-Oxide Thin Film Transistors Prepared by Sol-gel Method[J].Chinese Journal of Luminescence,2013,34(11):1550-1554. |
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| Authors: | LUO Wen-bin CHEN Wen-bin |
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| Institution: | School of Optoelectronic Information, Key Display Laboratory of Science and Technology of Sichuan, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | Zinc-tin-oxide (ZTO) thin film transistors (TFTs) were fabricated by sol-gel method. Thermogravimetric and differential thermal analyses (TG-DTAs) were performed to investigate the chemical reactivity in the ZTO solutions. The effects of annealing temperatures on characteristics of ZTO-TFTs were investigated in this paper. With the increasing of annealing temperatures, all samples are amorphous, and surface is uniform. The ZTO thin films annealed at 400℃ and 500℃ are highly transparent (>85%) in the visible region. When the annealing temperature increased from 300℃ to 500℃, the threshold voltage of solution-processed ZTO TFTs decreased from 15.85 V to 3.76 V, and the saturation mobility increased from 0.004 cm2·V-1·s-1 to 5.16 cm2·V-1·s-1. Ion/Ioff current ratio of 105 was obtained at 500℃. |
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| Keywords: | sol-gel annealing temperature thin film transistors electrical characteristics |
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