Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction |
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| Authors: | Ji Zhen-Guo Zhao Shi-Chao Xiang Yin Song Yong-Liang Ye Zhi-Zhen |
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| Affiliation: | State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms. |
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| Keywords: | zinc silicate sol-gel solid-phase reaction photoluminescence |
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