Electrical properties and defect chemistry of TiO2 single crystal. II. Thermoelectric power

The present work reports the thermoelectric power of high-purity single-crystal TiO(2) in the temperature range 1073-1323 K and in gas phases of controlled oxygen activities, p(O(2)), in the range 10(-13) to 7.5 x 10(4) Pa. The thermoelectric power versus log p(O(2)) dependence for strongly reduced TiO(2) at p(O(2)) < 10(-5) Pa may be approximated by a slope of 1/6, which is consistent with the defect disorder governed by electronic charge compensation of oxygen vacancies. The thermoelectric power data confirm that oxygen vacancies are the predominant ionic defects. These data indicate that TiO(2) at high p(O(2)) exhibits p-type properties. It is shown that the p(O(2)) related to the n-p transition increases with increase of temperature.