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Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition
Authors:Yu-Jia Zeng   Zhi-Zhen Ye   Wei-Zhong Xu   Li-Ping Zhu  Bing-Hui Zhao
Affiliation:

State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China

Abstract:ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.
Keywords:Nanowires   Metal–organic chemical vapor deposition   Zinc compounds   Scanning electron microscopy
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