Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition |
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Authors: | Yu-Jia Zeng Zhi-Zhen Ye Wei-Zhong Xu Li-Ping Zhu Bing-Hui Zhao |
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Affiliation: | State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed. |
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Keywords: | Nanowires Metal–organic chemical vapor deposition Zinc compounds Scanning electron microscopy |
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