|
|||||
|
|
| GaAs量子阱半导体微腔中腔极化激元的动态行为 | |
| 引用本文： | 刘文楷,安艳伟,林世鸣,张存善,张常年.GaAs量子阱半导体微腔中腔极化激元的动态行为[J].光子学报,2005,34(5):793-796. |
| 作者姓名： | 刘文楷 安艳伟 林世鸣 张存善 张常年 |
| 作者单位： | 北方工业大学;北方工业大学;北方工业大学 |
| 摘 要： | GaAs量子阱半导体微腔中, 光子同时与重空穴激子、轻空穴激子耦合形成腔极化激元. 本文采用三谐振子耦合模型, 计算了腔极化激元的三支的色散关系、线宽、有效质量及其群速度; 结果表明, 由于腔极化激元的三支中光子、重空穴激子、轻空穴激子所占的权重随着平面波矢（或入射角度）变化, 腔极化激元三支的线宽、有效质量及其群速度呈现出不同的动态行为. |
| 关 键 词： | 光子 激子 腔极化激元 量子阱 半导体微腔 |
| 收稿时间： | 2004-06-14 |
Dynamics of Cavity Polaritons in a GaAs Quantum-well Semiconductor Microcavity |
|
| Liu Wenkai,An Yanwei,LIN Shiming,Zhang Cunshan,Zhang Changnian.Dynamics of Cavity Polaritons in a GaAs Quantum-well Semiconductor Microcavity[J].Acta Photonica Sinica,2005,34(5):793-796. | |
| Authors: | Liu Wenkai An Yanwei LIN Shiming Zhang Cunshan Zhang Changnian |
| Institution: | (1 College of Information, North China University of Technology, Beijing 100041) (2 State Key Laboratory on Integrated Optoelectronics, Institute of semiconductor,Chinese Academy of Science, Beijing 100083) (3 College of Information, Hebei University of Technology, Tianjin 300130) |
| Abstract: | To provide the dynamics of cavity polariton in semiconductor microcavity containing GaAs quantum-well, the dispersions of the three cavity polaritons have been given by the model of three coupled oscillators, meanwhile the linewidths, group velocities and the mass of the three cavity polaritons have been demonstrated. The results indicated that because of the weight occupied by the photon, heavy hole exciton and light hole extiton in the three cavity ploariton the cavity polaritons exhibited different dynamic behaviors. |
| Keywords: | Photons Excitons Cavity polaritons Quantum well Semiconductor microcavity |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
| 点击此处可从《光子学报》浏览原始摘要信息 | |
| 点击此处可从《光子学报》下载免费的PDF全文 | |