Characterization of (As.Te)1-xSex thin films |
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Authors: | MM Hafiz AH Moharram AA Abu-Sehly |
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Institution: | (1) Physics Department, Assiut University, Assiut, Egypt, EG |
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Abstract: | 1-x Sex thin films (where x=0.20, 0.23, 0.27, 0.32 and 0.44) have been studied. Increasing the Se content was found to increase the
optical energy gap and the activation energy for conduction of the investigated films. The optical energy gap of the As0.40Te0.40Se0.20 films was increased up to 1.21 eV by increasing the film thickness to ∼120 nm, while thermal annealing at 480 K reduced it
down to 0.83 eV. The decrease of the optical gap is discussed on the basis of amorphous–crystalline transformations.
Received: 07 July 1997/Accepted: 30 July 1997 |
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