Atomic—Scale Kinetic Monte Carlo Simulation of {100}—Oriented Diamond Film Growth in C—H and C—H—CI Systems by Chemical Vapour Deposition |
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引用本文: | 安希忠,张禹,等.Atomic—Scale Kinetic Monte Carlo Simulation of {100}—Oriented Diamond Film Growth in C—H and C—H—CI Systems by Chemical Vapour Deposition[J].中国物理快报,2002,19(7):1019-1020. |
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作者姓名: | 安希忠 张禹 |
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作者单位: | [1]SchoolofMaterialsScienceandEngineering,UniversityofScienceandTechnologyBeijing,Beijing100083 [2]SchoolofAppliedScience,UniversityofScienceandTechnologyBeijing,Beijing100083 |
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摘 要: | We simulate the {100}-oriented diamond film growth of chemical vapour deposition (CVD) under different models in C-H and C-H-Cl systems in an atomic scale by using the revised kinetic Monte Carlo method.The simulation results show that:(1) the CVD diamond film growth in the C-H system is suitable for high substrate temperature,and the film surface roughness is very coarse;(2) the CVD diamond film can grow in the C-H-Cl system either at high temperature or at low temperature,and the film quality is outstanding;(3) atomic Cl takes an active role for the growth of diamond film,especially at low temperatures.The concentration of atomic Cl should be controlled in a proper range.
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关 键 词: | 金刚石薄膜 化学汽相沉积 Monte Carlo模拟 |
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