Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells |
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| Authors: | Sudhira Panda B K Panda S Fung |
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| Institution: | (1) Institute of Physics, Sachivalaya Marg, 751 005 Bhubaneswar, India;(2) Department of Physics, University of Hong Kong, Hong Kong, People’s Republic of China |
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| Abstract: | Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is proposed as a viable alternative
to that using parabolic quantum well which requires complex techniques to fabricate it. The transmission coefficients are
calculated using the hybrid incremental airy function plane wave approach. The room temperature current-voltage characteristics
have been calculated using transmission coefficients. The current-voltage characteristics are found to be similar in both
diodes. |
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| Keywords: | Parabolic and diffused resonant tunneling diodes transmission coefficient current-voltage characteristics dark current |
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