| 热丝法氢处理多晶硅锗薄膜 |
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| 引用本文： | 张建军,胡增鑫,谷士斌,赵颖,耿新华.热丝法氢处理多晶硅锗薄膜[J].半导体学报,2007,28(3). |
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| 作者姓名： | 张建军 胡增鑫 谷士斌 赵颖 耿新华 |
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| 作者单位： | 南开大学光电子研究所,天津市光电子薄膜器件与技术重点实验室,天津,300071 |
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| 基金项目： | 天津市自然科学基金，国家自然科学基金，教育部留学回国人员科研启动基金 |
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| 摘 要： | 优化了热丝法氢处理多晶硅锗薄膜工艺条件.通过测试材料暗电导的温度特性得出多晶硅锗材料的电导激活能,从而考察氢处理效果.结果表明,采用此技术可有效减少多晶硅锗薄膜中的缺陷态.在优化氢处理时衬底和热丝的温度后,可以把处理时间缩短致30min之内,明显短于其他氢处理技术.
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| 关 键 词： | 热丝法 氢处理 多晶硅锗 |
Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique |
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| Zhang Jianjun,Hu Zengxin,Gu Shibin,Zhao Ying,Geng Xinhua.Hydrogenation of Polycrystalline SiGe Thin Films by Hot Wire Technique[J].Chinese Journal of Semiconductors,2007,28(3). |
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| Authors: | Zhang Jianjun Hu Zengxin Gu Shibin Zhao Ying Geng Xinhua |
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| Abstract: | An optimized condition for defect passivation by the hot-wire technique was established. Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature. The results show that this technique can effectively reduce defects present in poly-Si1-xGex films. By optimizing the substrate and filament temperatures,the treatment can be accomplished in a short time of 20 ～ 30min, which is considerably shorter than other hydrogenation techniques. |
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| Keywords: | hot-wire hydrogenation polycrystatline SiGe |
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