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Photoelectric properties ofp-CuInSe2 crystals
Authors:V. A. Ivanov  I. A. Viktorov  V. F. Gremenok  E. P. Zaretskaya  I. V. Bodnar’
Affiliation:(1) Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., 220072 Minsk, Belarus;(2) Belarusian State University of Information Science and Radioelectronics, Belarus
Abstract:Spectra of the photoelectromotive force of p-CuInSe2 single crystals obtained by directional crystallization of a stoichiometric-composition melt in an upright ampoule have been investigated by the method of phase-sensitive detection. A difference in the phase shifts between the exciting light and the arising photoelectromotive force in the extrinsic (impurity) and intrinsic regions of optical absorption is determined. The lifetime in the region of optical self-absorption is found to equal τ=15·10−6 at T=77 K. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 129–131, January–February, 1997.
Keywords:chalcopyrite semiconductors  photoelectric properties
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