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Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates |
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| Authors: | H Momose H Okai H Deguchi N Mori S Takeyama |
| Institution: | aLow Temperature Center, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;bDepartment of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan;cInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan |
| Abstract: | Various temperature measurements of cyclotron resonance (CR) under pulsed ultra-high magnetic field up to 160 T were carried out in InGaAs/GaAs superlattice (SL) and InGaAs/AlAs SL samples grown by molecular beam epitaxy on GaAs substrates. Clear free-electron CR and impurity CR signals were observed in transmission of CO2 laser with wavelength of 10.6 μm. A binding energy of impurities in these SLs was roughly estimated based on the experiment as result, and we found it was smaller than the previous experimental result of GaAs/AlAs SLs and theoretical calculation with a simple model. |
| Keywords: | InGaAs/GaAs superlattice InGaAs/AlAs superlattice Cyclotron resonance Impurity state Binding energy |
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