Atomic and electronic processes of switching in amorphous thin films |
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Authors: | Chun Chiang |
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Institution: | Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of China |
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Abstract: | It is proposed that the conversion of C30 from C20 leads to switching. Since C30 has more connection points, the conductivity of C30 is higher and large current favours the C30 species; thus increasing the current increases the C30 density and less voltage is needed to sustain the same amount of current. This explains the S-shaped negative resistance. The concept is simple and the mathematics for quantitative calculation is manageable. |
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