| HgCdTe固态再结晶技术工艺的改进 |
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| 引用本文： | 李全葆,王跃,韩庆林,李玉德,宋炳文.HgCdTe固态再结晶技术工艺的改进[J].激光与红外,2000,30(1):45-47. |
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| 作者姓名： | 李全葆 王跃 韩庆林 李玉德 宋炳文 |
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| 作者单位： | 昆明物理研究所,昆明,650223 |
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| 摘 要： | HgCdTe固态再结晶技术主要包括合成-淬火-退火三个过程,本文对其中的合成工艺和淬火工艺进行改进,获得了较为满意的效果。用这种方法制备的HgCdTe材料单晶大、组份均匀、结构完整、电学参数好,并已做出多种高性能红外探测器
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| 关 键 词： | 晶体生长 固态再结晶 合金半导体 红外材料 |
Improvements on Solid-state Recrystallization Technique of HgCdTe |
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| LI Quan-bao,WANG Yue,HAN Qing-lin,LI Yu-de,SONG Bing-wen.Improvements on Solid-state Recrystallization Technique of HgCdTe[J].Laser & Infrared,2000,30(1):45-47. |
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| Authors: | LI Quan-bao WANG Yue HAN Qing-lin LI Yu-de SONG Bing-wen |
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| Abstract: | Solid state recrystallization technique of HgCdTe contains three steps:compounding,quenching and annealing.In this paper,the techniques of compounding and quenching are improved and the results are satisfactory.HgCdTe crystals growth by this method are of large grain size,uniform composition,perfect crystal structure and excellent electrical characteristics and many kinds of infrared detector have been made by these crystals. |
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| Keywords: | HgCdTe crystal growth solid state recrystallization hot bath quenching |
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