| 三材料线性掺杂石墨烯纳米条带场效应管性能 |
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| 引用本文： | 王伟,高健,张婷,张露,李娜,杨晓,岳工舒.三材料线性掺杂石墨烯纳米条带场效应管性能[J].计算物理,2015,32(1):115-126. |
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| 作者姓名： | 王伟 高健 张婷 张露 李娜 杨晓 岳工舒 |
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| 作者单位： | 南京邮电大学电子科学与工程学院, 江苏 南京 210023 |
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| 基金项目： | Supported by Natural Science Fouudation of Higher Eduction in Jiangsu Province (10KJD510006) |
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| 摘 要： | 采用量子动力学模型研究单材料和三材料的石墨烯纳米条带场效应管(GNRFETs)在不同掺杂情况下的弹道输运特性,模型基于非平衡格林函数方程(NEGF)以及自洽的泊松方程的量子数值解.结果证明:三材料线性掺杂的石墨烯纳米条带场效应管(TL-GNRFET)不仅能够有效地抑制短沟道效应(SCE)和漏极势垒降低效应(DIBL),而且相对于其它几种结构而言,它有更好的亚阈值斜率以及更高的开关电流比.另外,还研究了非对称栅结构对石墨烯场效应管的影响,结果表明,当上栅和下栅同时向源端移动的时候,可以改善器件的电流开关比.
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| 关 键 词： | 石墨烯场效应管 非平衡格林函数 三材料 线性掺杂 |
| 收稿时间： | 2014-01-25 |
| 修稿时间： | 2014-06-26 |
Performance of Asymmetric Linear Doping Triple-material-gate GNRFETs |
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| WANG Wei,GAO Jian,ZHANG Ting,ZHANG Lu,LI Na,YANG Xiao,YUE Gongshu.Performance of Asymmetric Linear Doping Triple-material-gate GNRFETs[J].Chinese Journal of Computational Physics,2015,32(1):115-126. |
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| Authors: | WANG Wei GAO Jian ZHANG Ting ZHANG Lu LI Na YANG Xiao YUE Gongshu |
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| Institution: | College of Electronic Science Engineering, Nanjing University of Post and Telecommunications, Nanjing, Jiangsu 210023, China |
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| Abstract: | Ballistic performance of single-material-gate and triple-material-gate graphene nanoribbon field effect transistors (GNRFETs) with various doping profiles is studied in a quantum kinetic model based on non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations.It shows that triple-material-gate GNRFET with linear doping (TL-GNRFET) exhibits significant advantage in reducing SCEs and DIBL effects,as well as achieving better subthreshold slope and better on/off current ratio.In addition,asymmetric gate underlap is also discussed.It is revealed that as top and bottom gates are both shifted towards source on/off state current performance is improved. |
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| Keywords: | GNRFET NEGF triple-gate-material linear doping |
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