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Analysis of charge conduction mechanisms in nitrided SiO2 Film on 4H SiC |
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| Authors: | Kuan Yew Cheong Wook Bahng |
| Affiliation: | a Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia b Semiconductor Power Research Group, Korea Electrotechnology Research Institute, PO Box 20, Changwon, Gyungnam 641-120, South Korea |
| Abstract: | Seven different thicknesses (2-20 nm) of nitrided SiO2 on n-type 4H-SiC have been employed to investigate the charge conduction mechanism through these oxides. Several potential mechanisms have been identified. The mechanisms are depending on electric field and oxide thickness. A relationship plot among these three parameters has been established. |
| Keywords: | Fowler-Nordheim tunneling Poole-Frenkel emission Electric breakdown field Space-charge limited |
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