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Oxidizing effects of high temperature annealing in reducing atmosphere in Ca-doped YIG films
Authors:B Antonini  SL Blank  S Lagomarsino  A Paoletti  P Paroli  F Scarinci  A Tucciarone
Institution:Laboratorio di Elettronica dello Stato Solido del CNR, Via Cineto Romano, 42, Roma, Italy;Bell Laboratories, Murray Hill, NJ 07974, USA;Laboratorio di Elettronica dello Stato Solido del CNR Via Cineto Romano, 42, Roma, Italy
Abstract:The existence of an oxidation mechanism is reported in Ca-doped YIG films, when high temperature annealing is carried out in N2 atmosphere. The annealing were performed at successively increasing temperatures, and optical absorption, lattice parameter and thermoelectric power were measured at each step. Optical absorption was observed going down to a minimum (T = 450°C in one cycle of annealing, T = 400°C in a different cycle) and then rise again. The minimum in absorption corresponds to a maximum of the lattice parameter, while the thermoelectric power is always p-type. Analysis of the data leads to the conclusion that we are observing a reoxidation process, triggered both by temperature and oxygen vacancy concentration. This process is subject to exhaustion. Previous annealing experiments are analyzed in the light of these results.
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