Application of molecular models to electronic structure calculations of defects in oxide crystals. I. Parametrization of the modified INDO method

A modified calculation scheme of the INDO method is applied for calculating the electronic structure of perfect and imperfect oxide crystals. In order to obtain a flexible scheme permitting reliable calculation of both the electronic structure and the defect conformations, the INDO parameters for H, Li, Mg, Si, O are fitted directly to reproduce one-electron energies as well as the vicinity of the potential energy curve minima for a series of diatomic molecules and the electronic structure of MgO and -crystoballite form of SiO₂. The method is tested on the Li₂SiO₃ crystal calculated within the framework of the large unit cell model.