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Mechanical stress effect on the crystallization behavior of Ge2Sb2Te5 films studied by electrical resistance measurement |
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| Authors: | Yingchao Du Yi Kan Xiaomei Lu Yunfei Liu Huifeng Bo Wei Cai Dazhi Hu Fengzhen Huang Jinsong Zhu |
| Institution: | 1. National Laboratory of Solid State Microstructures and Physics School, Nanjing University, 210093 Nanjing, P.R. China;2. College of Science, Hebei United University, 063009 Tangshan, P.R. China;3. School of Physics and Electronic Engineering, Guangzhou University, 510006 Guangzhou, P.R. China;4. Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, 210016 Nanjing, P.R. China;5. National Laboratory of Solid State Microstructures and Physics School, Nanjing University, 210093 Nanjing, P.R. ChinaPhone: 86‐25‐83593202, Fax: +86‐25‐83595535 |
| Abstract: | The mechanical stress effect on the crystallization behaviour of Ge2Sb2Te5(GST) thin films is carefully investigated by electrical resistance measurements. It is found that the crystallization temperature of GST films increases as external compressive stress is applied, while the crystallization temperature decreases under tensile stress. We also find that the uneven distribution of extrinsic stress can widen the span of transition temperature. These results clearly demonstrate that mechanical stress plays an important role during the crystallization process of GST films and may further influence the reliability and storage speed of relevant devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | phase‐change materials extrinsic stress transition temperature resistance |