Two‐photon absorption induced anti‐Stokes emission in single InGaN/GAN quantum‐dot‐like objects |
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| Authors: | R Bardoux M Funato A Kaneta Y Kawakami A Kikuchi K Kishino |
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| Institution: | 1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615‐8510, Japan;2. Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102‐8554, Japan |
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| Abstract: | We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti‐Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | quantum dots nitride semiconductors Auger recombination anti‐Stokes emission two‐photon absorption InGaN |
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