Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide |
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Authors: | Shailesh Kumar Madisetti Thenappan Chidambaram Padmaja Nagaiah Vadim Tokranov Michael Yakimov Serge Oktyabrsky |
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Affiliation: | College of Nanoscale Science and Engineering, University at Albany – SUNY, 257 Fuller Road, Albany, NY 12203, USA |
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Abstract: | Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in‐situ grown Al2O3 gate oxide are analyzed as a function of sheet hole density, top‐barrier thickness and temperature. Mobility dependence on Al0.8Ga0.2Sb top‐barrier thickness shows that the relative contribution of interface‐related scattering is as low as ~30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top‐barrier thickness demonstrates mobility of 980 cm2/Vs giving sheet resistance of 4.3 kΩ/sq, very close to the minimum QW resistance in the bulk. The mobility–temperature dependences indicate that the interface‐related scattering is dominated by remote Coulomb scattering at hole densities <1 × 1012 cm–2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | hole mobility InGaSb InAs passivation p‐MOSFETs |
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