Depth profiling organic/inorganic interfaces by argon gas cluster ion beams: sputter yield data for biomaterials,in‐vitro diagnostic and implant applications |
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| Authors: | Peter J. Cumpson Jose F. Portoles Anders J. Barlow Naoko Sano Mark Birch |
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| Affiliation: | 1. National EPSRC XPS User's Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, , Newcastle upon Tyne, NE1 7RU UK;2. Musculoskeletal Research Group, Institute of Cellular Medicine, Medical School, Newcastle University, , Newcastle upon Tyne, NE2 4HH UK |
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| Abstract: | Argon gas cluster ion beam sources are likely to become much more widely available on XPS and SIMS instruments in the next few years. Much attention has been devoted to their ability to depth profile organic materials with minimum damage. What has not been the focus of attention (possibly because it has been very difficult to measure) is the large ratio of sputter yield for organic materials compared with inorganic materials using these sources and the special opportunities this presents for studies of organic/inorganic interfaces. Traditional depth profiling by monatomic argon ions introduces significant damage into the organic overlayer, and because sputter rates in both organic and inorganic are similar for monatomic ions the interface is often ‘blurred’ due to knock‐on and other damage mechanisms. We have used a quartz crystal technique to measure the total sputter yield for argon cluster ions in a number of materials important in medical implants, biomaterials and diagnostic devices, including polymethyl methacrylate, collagen, hydroxyapatite, borosilicate glass, soda lime glass, silicon dioxide and the native oxides on titanium and stainless steel. These data fit a simple semi‐empirical equation very well, so that the total sputter yield can now be estimated for any of them for the entire range of cluster ion energy typical in XPS or SIMS. On the basis of our total sputter yield measurements, we discuss three useful ‘figures‐of‐merit’ for choosing the optimum cluster ion energy to use in depth profiling organic/inorganic samples. For highest selectivity in removing the organic but not the inorganic material the energy‐per‐atom in the cluster should be below 6 eV. A practical balance between selectivity and reasonably rapid depth profiling is achieved by choosing a cluster ion energy having between around 3 and 9 eV energy‐per‐atom. Copyright © 2013 John Wiley & Sons, Ltd. |
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| Keywords: | XPS SIMS cluster ion sputter yield GCIB sputtering |
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