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Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy |
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| Authors: | Bram Hoex Michel Bosman Naomi Nandakumar W M M Kessels |
| Institution: | 1. Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), 117574 Singapore, Singapore;2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602 Singapore, Singapore;3. Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 Singapore, Singapore;4. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513m, 5600 MB Eindhoven, The Netherlands |
| Abstract: | The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially‐resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as‐deposited and annealed Al2O3 films grown on c‐Si substrates by plasma‐assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2‐like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c‐Si surface passivation by Al2O3. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | surface passivation Al2O3 electron energy loss spectroscopy silicon wafers solar cells |