Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity

AlGaN/GaN hetero‐field‐effect‐transistor‐type (HFET‐type) photosensors are fabricated with a p‐GaInN optical gate for the detection of visible light. These photosensors employ a two‐dimensional electron gas at the heterointerface between AlGaN and GaN as a highly conductive channel with a high electron mobility. By changing the InN molar fraction in the p‐GaInN optical gate, the wavelength range of the photosensitivity of the HFET‐type photosensors can be controlled. The photosensitivity of the AlGaN/GaN HFET‐type photosensors with a p‐GaInN optical gate greatly surpassed those of commercially available Si pin and Si avalanche photodiodes, and was comparable to those of photomultiplier tubes. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)