1. Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso‐cho, 466‐8555 Nagoya, Japan;2. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso‐cho, 466‐8555 Nagoya, Japan;3. Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto‐cho, 487‐8501 Kasugai, Japan
Abstract:
We demonstrate the fabrication of a solid state heterojunction photovoltaic device with solution‐processed graphene oxide (GO) and n‐Si. Partially reduced GO with a high optical gap (2.8 eV) was spin‐coated on the n‐Si substrate and a heterojunction device was fabricated with the structure of Au/pr‐GO/n‐Si. In the fabricated device, incident light was transmitted through the thin GO film to reach the junction interface, generating photoexciton, and thereby a photovoltaic action was observed. By means of a built‐in electric potential at the GO/n‐Si junction, photoexcited electrons and holes can be separated, transported and collected at the electrodes.
