Evidence of two‐photon absorption in strain‐free quantum dot GaAs/AlGaAs solar cells

We report the fabrication procedure and the characterization of an Al_0.3Ga_0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.