Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates |
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| Authors: | Soyun Park Jae Hyuk Lee Hee‐Dong Kim Seok Man Hong Ho‐Myoung An Tae Geun Kim |
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| Affiliation: | 1. School of Electrical Engineering, Korea University, Anam‐dong 5‐ga, Seongbuk‐gu, 136‐701 Seoul, Korea;2. Digital Electronics Department, Osan College, Chenghakro 45, Osan‐si, Gyunggi‐do, 447‐749, Korea |
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| Abstract: | The authors report the resistive switching characteristics of sol–gel based ZnO nanorods (NRs) fabricated on flexible substrates. A resistance ratio of 10, endurance of over 100 cycles, and narrower dispersion in the ON/OFF voltages and resistances compared to ZnO thin‐film devices are demonstrated. Furthermore, the resistive switching characteristics on flexible substrates are maintained under severe substrate bending because of the ductile properties of the nanorods. Devices composed of the Au/sol–gel based NRs/Au structure have the potential for low‐temperature flexible nonvolatile memory applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | resistive switching ZnO nanorods sol− gel method |
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