Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100) |
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Authors: | Aftab M Hussain Hossain M Fahad Galo A Torres Sevilla Muhammad M Hussain |
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Institution: | Integrated Nanotechnology Lab, Electrical Engineering Program, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955‐6900, Saudi Arabia |
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Abstract: | We demonstrate a simple, low‐cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono‐crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma‐assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in‐situ Czochralski process. We show well‐behaved high‐κ /metal gate metal–oxide–semiconductor capacitors (MOSCAPs) using this film. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | germanium physical vapor deposition crystallization surface roughness MOSCAP thin films |
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