High performance Zn–Sn–O thin film transistors with Cu source/drain electrode |
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| Authors: | Chul‐Kyu Lee Se Yeob Park Hong Yoon Jung Chang‐Kyu Lee Byeong‐Geun Son Hyo Jin Kim Young‐Joo Lee Young‐Chang Joo Jae Kyeong Jeong |
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| Institution: | 1. Department of Materials Science and Engineering, Inha University, Incheon 402‐751, Korea;2. Department of Materials Science and Engineering, Seoul National University, Seoul 151‐742, Korea |
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| Abstract: | Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μFE) of 13.2 cm2/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (Vth) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and Vth values of 0.48 V/decade and 3.0 V, respectively as well as a high μFE value of 18.7 cm2/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | zinc tin oxide copper diffusion barriers sputtering thin‐film transistors |
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