Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation |
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| Authors: | G. S. Tang F. Zeng C. Chen S. Gao H. D. Fu C. Song G. Y. Wang F. Pan |
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| Affiliation: | 1. Key Laboratory of Advanced Materials (MOE), Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China;2. Key Laboratory of Advanced Materials (MOE), Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. ChinaPhone: +86 010 62772907, Fax: +86 010 62771160 |
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| Abstract: | We investigate the resistive switching behaviour of a tantalum oxide nanolayer‐based nonvolatile memory with Pt/TaO5–x/TaN structure, which was prepared at room temperature through a processing compatible with CMOS technology. The tantalum oxide nanolayer with thickness of about 5 nm was fabricated by plasma oxidation of TaN films. The switching mechanism can be explained by the modulation of the local oxygen‐deficient conduction channel resulting from oxygen ions drift. This Letter represents a cost‐efficient method for developing nanoscale restive switching nonvolatile memories. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | tantalum oxide plasma oxidation resistive switching nonvolatile memory |
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