Quantenchemische Untersuchung der Elementarprozesse beim Plasmaätzen im System Fluor/Silizium |
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| Authors: | Christian Opitz Hans Müller Adnan Kodlaa |
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| Institution: | (1) Sektion Chemie, Friedrich-Schiller-Universität Jena, DDR-6900 Jena, Germany |
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| Abstract: | Summary Using the cluster model of the silicon (111) surface we derive by means of EHT calculations a mechanism of reactive plasma etching in the system F/Si including diffusion processes. Species SiF2 are found to be the primary etching products at the surface. SiF4 is formed with high probability in the gas phase. |
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| Keywords: | Silicon Fluorine Plasma etching Elementary reactions Cluster model EHT method |
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